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savantic semiconductor product specification silicon pnp power transistors 2SB988 description with t o-220c package low collector saturation voltage applications for vertical output and general purpose applicaitons pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -7 v i c collector current (dc) -3 a i b base current -0.5 a p c collector dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -50~150 fig.1 simplified outline (to-220) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB988 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-30ma; i b =0 -60 v v cesat collector-emitter saturation voltage i c =-3a; i b =-0.3a -1.0 v v be base-emitter on voltage i c =-0.5a ; v ce =-5v -1.0 v i cbo collector cut-off current v cb =-60v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-7v; i c =0 -0.1 ma h fe-1 dc current gain i c =-0.5a ; v ce =-5v 60 200 h fe-2 dc current gain i c =-3a ; v ce =-5v 20 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 150 pf f t transition frequency i c =-0.5a ; v ce =-5v 9 mhz h fe-1 classifications o y 60-120 100-200 downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SB988 package outline fig.2 outline dimensions (unindicated tolerance:0.10mm) downloaded from: http:///

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